硅（Si）

狗万正网地址牛津仪器等离子技术为世界领先的流程解决方案提供硅（Si）. From fast, deep, controlled etch to the finest nanostructures we have the plasma solution you need.

Si is the cornerstone of the semiconductor industry as well as providing the raw material for the majority of MEMS devices. Its properties and abundance has meant that it is ever present in modern technology.

Several solutions are available for etching Si and the choice depends very much on which device structure is required:

Bosch process enables high etch rates, selectivity and anisotropy
低温深硅蚀刻（Cryo-dsie）通常用于平滑侧壁和/或纳米蚀刻或圆锥形型材，如微模糊等。万博电脑网页版登录
混合过程是浅，低宽高的精细特征的选项
Deposition of high-quality a-Si is achieved usingPECVD

High rate, high selectivity deep silicon etch process using alternating deposition and etch steps
Applicable to silicon, silicon-on-insulator (SOI) and silicon on glass
Wafer size:最多2“
- Product:Plasmapro 80.
Wafer size:up to 200mm
- Product:PlasmApro 100.

深硅博世蚀刻

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Poly Si可以使用纯和稀释的硅烷使用不同的化学物质。高品质的Poly Si超过2英寸晶片。

Wafer size:up to 200mm
- Product:PlasmApro 100./PlasmApro 100.Estrelas

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可以使用基于HBR的选择性硅蚀刻来干蚀刻SiInductively Coupled Plasma (ICP)process technique.

Large process database on various process chemistries.
Competitive process results in a large number of applications from black Si formation to high aspect ratio features.

Wafer size:up to 200mm
- Product:PlasmApro 100.

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具有高选择性的各向同性Si蚀刻到光致抗蚀剂（PR）和氧化硅（SiO₂)
也适用于MEMS释放蚀刻
Wafer size: up to 200mm
- Product:PlasmApro 100./PlasmApro 100.Estrelas

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在低温温度下使用简单而极清洁的等离子体化学进行深度SI蚀刻
Vertical features with smooth sidewalls
Wafer size:up to 200mm
- Product:PlasmApro 100./PlasmApro 100.Estrelas

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低温Si蚀刻

Ultra high selectivity cryo-silicon etch

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