Germanium Antimony Telluride

GST(full chemical formula Ge₂Sb₂Te₅) is used as a phase shift memory material. GST and related films may be dry etched usingInductively Coupled Plasma (ICP),Reactive Ion Etching (RIE)orIon Beam Etch (IBE).

Wafer size:up to 200mm
- Product:PlasmaPro 100

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Wafer size:up to 200mm
Product:Ionfab300

More on IBE Request more information

Wafer size:up to 200mm
- Product:PlasmaPro 100

More on RIE Request more information

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