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Webinar
How To Plasma Etch Silicon Carbide (SiC) To Achieve Maximum Device Performance

7 May 2020 at 3PM (UK)


关于网络研讨会

Silicon Carbide (SiC) is becoming well established within power device manufacturers as it offers compelling advantages vs Si in several applications.

Manufacturing SiC devices require expert knowledge of plasma processing techniques in order to maximise device performance, watch this webinar to discover more about these techniques.

在这个网络研讨会上,您将学习:

  • How to achieve precision features on SiC surfaces
  • Fast and efficient plasma etching techniques to achieve deep SiC vias
SiC etch
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Meet the Presenter

Mark Dineen博士

Mark Dineen博士
Technical Marketing Manager, Oxford Instruments

Mark Dineen博士拥有超过20年的等离子加工经验。他最近的工作包括将这些知识应用于从半导体激光器到基于GaN的RF器件的各种设备。

He is now an experienced Technical Marketing Manager with a demonstrated history of communicating complex technical ideas and scientific concepts to a varied audience. These technologies include ALD, ALE, CVD, ICP, PECVD and RIE plasma processing and he covers how these can deliver device solutions to our customers.

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