Gallium Nitride

Gallium Nitride(GaN) is an exciting material that is enabling key advances in some important technologies. GaN High Brighntess LEDs (HBLEDs) have already revolutionised lighting, GaN laser diodes are used for high speed data transmission while GaN based RF devices will soon be applied for efficient power transfer and mobile phone base stations. GaN may be dry etched usingInductively Coupled Plasma (ICP),Reactive Ion Etching (RIE)orIon Beam Etch (IBE). It can be deposited usingALD.